Gate VoltageDependence of theMagnetotransport in Double QuantumWells
نویسنده
چکیده
We have investigated the gate-dependent magnetoresistance of strongly asymmetric double-well structures. The structures were prepared by inserting a thin Al0.3Ga0.7As barrier into the GaAs buffer layer of standard modulation-doped GaAs/Al0.3Ga0.7As heterojunctions. The resulting double-well system consists of a nearly rectangular well and of a triangular well coupled by tunneling through the thin barrier. With a proper choice of growth parameters one can control the occupancy of the two wells and of the two lowest (bonding and antibonding) subbands. The electron properties may also be changed by applying frontor back-gate voltage between the electrodes attached to corresponding gate layer and the 2DEG.
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